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application 1: the acs770 outputs an analog signal, v out , that varies linearly with the bidirectional ac or dc primary sampled cur- rent, i p , within the range specified. r f and c f are for optimal noise management, with values that depend on the application. ACS770XCB the allegro ? acs770 family of current sensor ics provides economical and precise solutions for ac or dc current sensing. typical applications include motor control, load detection and management, power supply and dc-to-dc converter control, inverter control, and overcurrent fault detection. the device consists of a precision, low-offset linear hall circuit with a copper conduction path located near the die. applied current flowing through this copper conduction path generates a magnetic field that is concentrated by a low magnetic hysteresis core, then converted by the hall ic into a proportional voltage. device accuracy is optimized through the close proximity of the magnetic signal to the hall transducer. a precise, proportional output voltage is provided by the low-offset, chopper-stabilized bicmos hall ic, which is programmed for accuracy at the factory. proprietary digital temperature compensation technology greatly improves the ic accuracy and temperature stability without influencing the high-bandwidth operation of the analog output. high-level immunity to current conductor dv/dt and stray electric fields is offered by allegro proprietary integrated shield technology for low output voltage ripple and low offset drift in high-side, high-voltage applications. the output of the device has a positive slope (>v cc /2 for bidirectional devices) when an increasing current flows through the primary copper conduction path (from terminal 4 to terminal 5), which is the path used for current sampling. the internal resistance of this conductive path is 100 ? typical, providing low power loss. the thickness of the copper conductor allows survival of the device at high overcurrent conditions. the terminals of the acs770-ds, rev. 5 thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor continued on the next page typical application 5 v v out r f c f c byp 0.1 f ip+ ip? 2 gnd 4 5 acs770 3 1 viout vcc i p ? industry-leading total output accuracy achieved with new piecewise linear digital temperature compensation of of fset and sensitivity ? industry-leading noise performance through proprietary amplifier and filter design techniques ? 120 khz typical bandwidth ? 4.1 s output rise time in response to step input current ? integrated shield greatly reduces capacitive coupling from current conductor to die due to high dv/dt signals, and prevents of fset drift in high-side, high-voltage applications ? greatly improved total output error through digitally programmed and compensated gain and of fset over the full operating temperature range ? small package size, with easy mounting capability ? monolithic hall ic for high reliability ? ultralow power loss: 100 ? internal conductor resistance ? galvanic isolation allows use in economical, high-side current sensing in high-voltage systems ? 4.5 to 5.5 v, single supply operation ? output voltage proportional to ac or dc currents ? factory-trimmed for accuracy ? extremely stable output of fset voltage pff leadform psf leadform additional leadforms available for qualifying volumes type tested package: 5-pin package (suffix cb) continued on the next page description features and benefits tv america certificate number: u8v 14 05 54214 028 november 2, 2016
2 conductive path are electrically isolated from the signal leads (pins 1 through 3). this allows the acs770 family of sensor ics to be used in applications requiring electrical isolation without the use of opto-isolators or other costly isolation techniques. the device is fully calibrated prior to shipment from the factory. the acs770 family is lead (pb) free. all leads are plated with 100% matte tin, and there is no pb inside the package. the heavy gauge leadframe is made of oxygen-free copper. description (continued) selection guide part number [1] package primary sampled current, i p (a) sensitivity sens (typ.) (mv/a) current directionality t op (c) packing [2] terminals signal pins acs770lcb-050b-pff-t formed formed 50 40. bidirectional C40 to 150 34 pieces per tube acs770lcb-050u-pff-t formed formed 50 80. unidirectional acs770lcb-100b-pff-t formed formed 100 20. bidirectional acs770lcb-100u-pff-t formed formed 100 40. unidirectional acs770lcb-100u-psf-t straight formed 100 40. unidirectional acs770kcb-150b-pff-t formed formed 150 13.3 bidirectional C40 to 125 acs770kcb-150b-psf-t straight formed 150 13.3 bidirectional acs770kcb-150u-pff-t formed formed 150 26.7 unidirectional acs770kcb-150u-psf-t straight formed 150 26.7 unidirectional acs770ecb-200b-pff-t formed formed 200 10. bidirectional C40 to 85 acs770ecb-200b-psf-t straight formed 200 10. bidirectional acs770ecb-200u-pff-t formed formed 200 20. unidirectional acs770ecb-200u-psf-t straight formed 200 20. unidirectional 1 additional leadform options available for qualifed volumes. 2 contact allegro for additional packing options. ? undervoltage lockout for v cc below specification ? aec q-100 automotive qualified ? ul certified, file no. e316429 features and benefits (continued) thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
3 isolation characteristics characteristic symbol notes rating unit dielectric strength test voltage [1] v iso agency type-tested for 60 seconds per ul standard 60950-1, 2nd edition 4800 vac working voltage for basic isolation v wfsi for basic (single) isolation per ul standard 60950-1, 2nd edition 990 vdc or v pk 700 v rms working voltage for reinforced isolation v wfri for reinforced (double) isolation per ul standard 60950- 1, 2nd edition 636 vdc or v pk 450 v rms 1 60-second testing is only done during the ul certifcation process. in production, allegro conducts 1-second isolation testing according to ul 60950-1, 2nd edition. absolute maximum ratings characteristic symbol notes rating unit forward supply voltage v cc 6 v reverse supply voltage v rcc C0.5 v forward output voltage v iout 25 v reverse output voltage v riout C0.5 v output source current i out(source) viout to gnd 3 ma output sink current i out(sink) minimum pull-up resistor of 500 , from vcc to viout 10 ma nominal operating ambient temperature t op range e C40 to 85 c range k C40 to 125 c range l C40 to 150 c maximum junction t j (max) 165 c storage temperature t stg C65 to 165 c specifications thermal characteristics: may require derating at maximum conditions characteristic symbol test conditions [2] value unit package thermal resistance r ja mounted on the allegro evaluation board with 2800 mm 2 (1400 mm 2 on component side and 1400 mm 2 on opposite side) of 4 oz. copper connected to the primary leadframe and with thermal vias connecting the copper layers. performance is based on current flowing through the primary leadframe and includes the power consumed by the pcb. 7 c/w 2 additional thermal information available on the allegro website. typical overcurrent capabilities [3][4] characteristic symbol notes rating unit overcurrent i poc t a = 25c, 1 second duration, 1% duty cycle 1200 a t a = 85c, 1 second duration, 1% duty cycle 900 a t a = 150c, 1 second duration, 1% duty cycle 600 a 3 test was done with allegro evaluation board. the maximum allowed current is limited by t j (max) only. 4 for more overcurrent profles, please see faq on the allegro website, www.allegromicro.com. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
4 ip+ ip? viout gnd vcc 4 5 3 2 1 terminal list table number name description 1 vcc device power supply terminal 2 gnd signal ground terminal 3 viout analog output signal 4 ip+ terminal for current being sampled 5 ipC terminal for current being sampled functional block diagram pinout diagram v+ dynamic offset cancellation eeprom and control logic vcc gnd viout signal recovery to all subcircuits c byp c l temperature sensor offset control sensitivity control programming control ip? ip+ thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
5 common operating characteristics: valid at t op = C40c to 150c, c byp = 0.1 f, and v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit supply voltage v cc 4.5 5.0 5.5 v supply current i cc output open C 10 15 ma supply zener voltage v z t a = 25c, i cc = 30 ma 6.5 7.5 C v power-on delay [1][2] t pod t a = 25c, c byp = open C 90 C s temperature compensation power-on time [1] t tc t a = 25c, c byp = open C 90 C s undervoltage lockout (uvlo) threshold [1] v uvloh t a = 25c, v cc rising C 3.8 C v v uvlol t a = 25c, v cc falling C 3 C v uvlo enable/disable delay time [1][2] t uvloe t a = 25c, c byp = open, v cc fall time (5 v to 3 v) = 1 s C 75 C s t uvlod t a = 25c, c byp = open, v cc recover time (3 v to 5 v) = 1 s C 14 C s power-on reset voltage [1] v porh t a = 25c, v cc rising C 2.9 C v v porl t a = 25c, v cc falling C 2.7 C v rise time [1][2] t r i p step = 60% of i p +, 10% to 90% rise time, t a = 25c, c l = 0.47 nf C 4.1 C s propagation delay time [1][2] t prop i p step = 60% of i p +, 20% input to 20% output, t a = 25c, c l = 0.47 nf C 2.4 C s response time [1][2] t response i p step = 60% of i p +, 80% input to 80% output, t a = 25c, c out = 0.47 nf C 4.6 C s internal bandwidth bw i C3 db; t a = 25c, c l = 0.47 nf C 120 C khz output load resistance r l viout to gnd 4.7 C C k? output load capacitance c l viout to gnd C C 10 nf primary conductor resistance r primary t a = 25c C 100 C ? quiescent output voltage [1] v iout(qbi) bidirectional variant, i p = 0 a, t a = 25c C v cc /2 C v v iout(quni) unidirectional variant, i p = 0 a, t a = 25c C 0.5 C v ratiometry [1] v rat v cc = 4.5 to 5.5 v C 100 C % 1 see characteristic defnitions section of this datasheet. 2 see timing data section of this datasheet. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
6 x 050b performance characteristics [1] : t op = C40c to 150c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p C50 C 50 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 39.04 40 40.96 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 150c 39.04 40 40.96 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 38.6 40 41.4 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C0.72 0.24 0.72 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 10 C mv nonlinearity e lin measured using full-scale and half-scale i p , C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 150c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 50 a C 120 300 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 150c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 2.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
7 x 050u performance characteristics [1] : t op = C40c to 150c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p 0 C 50 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 78.08 80 81.92 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 150c 78.08 80 81.92 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 77.2 80 82.8 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C1.44 0.48 1.44 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 20 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 150c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 50 a C 120 300 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 150c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 0.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
8 x 100b performance characteristics [1] : t op = C40c to 150c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p C100 C 100 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 19.52 20 20.48 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 150c 19.52 20 20.48 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 19.3 20 20.7 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C0.36 0.12 0.36 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 6 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 150c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 100 a C 170 400 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 150c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 2.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
9 x 100u performance characteristics [1] : t op = C40c to 150c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p 0 C 100 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 39.04 40 40.96 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 150c 39.04 40 40.96 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 38.6 40 41.4 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C0.72 0.24 0.72 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 12 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 150c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 100 a C 170 400 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 150c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 150c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 0.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
10 x 150b performance characteristics [1] : t op = C40c to 125c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p C150 C 150 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 13.01 13.33 13.65 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 125c 13.01 13.33 13.65 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 12.86 13.33 13.8 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C0.24 0.08 0.24 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 4 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 125c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 150 a C 225 400 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 125c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % symmetry e sym over half-scale of i p 99 100 101 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 2.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
11 x 150u performance characteristics [1] : t op = C40c to 125c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p 0 C 150 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 26.02 26.66 27.30 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 125c 26.02 26.66 27.30 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 25.73 26.66 27.59 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C0.48 0.16 0.48 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 6 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 125c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 150 a C 225 400 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 125c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 125c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 0.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
12 x 200b performance characteristics [1] : t op = C40c to 85c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p C200 C 200 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 9.76 10 10.24 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 85c 9.76 10 10.24 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 9.65 10 10.35 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C0.18 0.06 0.18 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 3 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 85c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 200 a C 250 575 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 85c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 2.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
13 x 200u performance characteristics [1] : t op = C40c to 85c, c byp = 0.1 f, v cc = 5 v, unless otherwise specifed characteristic symbol test conditions min. typ. max. unit primary sampled current i p 0 C 200 a sensitivity [2] sens ta measured using full-scale i p , t a = 25c 19.52 20 20.48 mv/a sens (top)ht measured using full-scale i p , t op = 25c to 85c 19.52 20 20.48 mv/a sens (top)lt measured using full-scale i p , t op = C40c to 25c 19.3 20 20.7 mv/a sensitivity drift over lifetime [3] sens life t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C0.36 0.12 0.36 mv/a noise [4] v noise t a = 25c, 10 nf on viout pin to gnd C 6 C mv nonlinearity e lin measured using full-scale and half-scale i p C1 C 1 % electrical offset voltage [5][6] v oe(ta) i p = 0 a, t a = 25c C10 4 10 mv v oe(top)ht i p = 0 a, t op = 25c to 85c C10 6 10 mv v oe(top)lt i p = 0 a, t op = C40c to 25c C20 6 20 mv electrical offset voltage drift over lifetime [3] ?v oe(life) i p = 0 a, t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C5 2 5 mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 200 a C 250 575 ma total output error [7] e tot(ta) measured using full-scale i p , t a = 25c C2.4 0.5 2.4 % e tot(ht) measured using full-scale i p , t op = 25c to 85c C2.4 1.5 2.4 % e tot(lt) measured using full-scale i p , t op = C40c to 25c C3.5 2 3.5 % total output error drift over lifetime [3] e tot(life) t op = C40c to 85c, shift after aec-q100 grade 0 qualification testing C1.9 0.6 1.9 % 1 see characteristic performance data page for parameter distributions over temperature range. 2 this parameter may drift a maximum of sens life over lifetime. 3 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits, including package hysteresis. cannot be guaranteed. drift is a function of customer application conditions. contact allegro microsystems for further information. 4 3 sigma noise voltage. 5 drift is referred to ideal v iout(qbi) = 0.5 v. 6 this parameter may drift a maximum of v oe(life) over lifetime. 7 this parameter may drift a maximum of e tot(life) over lifetime. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
14 characteristic performance data data taken using the acs770lcb-050b accuracy data mean mean + 3 sigma mean ? 3 sigma 6 4 2 0 -2 -4 -6 -8 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 41.0 40.8 40.6 40.4 40.2 40.0 39.8 39.6 39.4 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 v oe (mv) e lin (%) sens (mv/a) e tot (%) t a (c) t a (c) t a (c) t a (c) 250 200 150 100 50 0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
15 mean mean + 3 sigma mean ? 3 sigma 8 6 4 2 0 -2 -4 -6 -8 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 20.4 20.3 20.2 20.1 20.0 19.9 19.8 19.7 19.6 v oe (mv) e lin (%) sens (mv/a) e tot (%) t a (c) t a (c) t a (c) t a (c) 400 350 300 250 200 150 100 50 0 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature data taken using the acs770lcb-100b accuracy data thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
16 mean mean + 3 sigma mean ? 3 sigma 8 6 4 2 0 -2 -4 -6 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 13.60 13.55 13.50 13.45 13.40 13.35 13.30 13.25 13.20 13.15 13.10 v oe (mv) e lin (%) sens (mv/a) e tot (%) t a (c) t a (c) t a (c) t a (c) 450 400 350 300 250 200 150 100 50 0 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature data taken using the acs770kcb-150b accuracy data thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
17 mean mean + 3 sigma mean ? 3 sigma 6 4 2 0 -2 -4 -6 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 10.15 10.10 10.05 10.00 9.95 9.90 9.85 9.80 v oe (mv) e lin (%) sens (mv/a) e tot (%) t a (c) t a (c) t a (c) t a (c) 600 500 400 300 200 100 0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature data taken using the acs770ecb-200b accuracy data thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
18 data taken using the acs770lcb-100b timing data response time i p = 60 a , 10% to 90% rise time = 1 s, c bypass = 0.1 f, c l = 0.47 nf rise time i p = 60 a , 10% to 90% rise time = 1 s, c bypass = 0.1 f, c l = 0.47 nf 80% of input 80% of output t response = 4.56 s i p = 60 a v iout 10% of output 90% of output t r = 4.1 s i p = 60 a v iout thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
19 propagation time i p = 60 a , 10% to 90% rise time = 1 s, c bypass = 0.1 f, c l = 0.47 nf power-on delay i p = 60 a dc, c bypass = open, c l = 0.47 nf 20% of input 20% of output t prop = 2.4 s i p = 60 a v iout 90% of output t pod = 88 s v cc v cc (min) v iout thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
20 uvlo enable time ( t uvloe ) i p = 0 a , c bypass = open, c l = open, v cc 5 v to 3 v fall time = 1 s uvlo disable time ( t uvlod ) i p = 0 a , c bypass = open, c l = open, v cc 3 v to 5 v recovery time = 1 s 90% of output t uvlod = 13.9 s v cc v cc (min) v iout t uvloe = 75.3 s v uvlol v iout = 0 v v cc v iout thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
21 definitions of accuracy characteristics characteristic definitions sensitivity (sens) the change in device output in response to a 1 a change through the primary conductor. the sensitivity is the product of the mag - netic circuit sensitivity (g / a) and the linear ic amplifier gain (mv/g). the linear ic amplifier gain is programmed at the factory to optimize the sensitivity (mv/a) for the half-scale current of the device. noise (v noise ) the noise floor is derived from the thermal and shot noise observed in hall elements. dividing the noise (mv) by the sensi- tivity (mv/a) provides the smallest current that the device is able to resolve. nonlinearity (e lin ) the acs770 is designed to provide a linear output in response to a ramping current. consider two current levels: i1 and i2. ide- ally, the sensitivity of a device is the same for both currents, for a given supply voltage and temperature. nonlinearity is present when there is a difference between the sensitivities measured at i1 and i2. nonlinearity is calculated separately for the positive (e linpos ) and negative (e linneg ) applied currents as follows: e linpos = 100 (%) {1 C (sens ipos2 / sens ipos1 ) } e linneg = 100 (%) {1 C (sens ineg2 / sens ineg1 )} where: sens ix = (v iout(ix) C v iout(q) )/ ix and i posx and i negx are positive and negative currents. then: e lin = max( e linpos , e linneg ) ratiometry the device features a ratiometric output. this means that the quiescent voltage output, v ioutq , and the magnetic sensitivity, sens, are proportional to the supply voltage, v cc .the ratiometric change (%) in the quiescent voltage output is defined as: v cc 5 v v ioutq(v cc ) v ioutq(5v) ?v ioutq(?v) = 100 (%) and the ratiometric change (%) in sensitivity is defined as: v cc 5 v = 100 (%) ?sens (?v) sens (v cc ) sens (5v) quiescent output voltage (v iout(q) ) the output of the device when the primary current is zero. for bidirectional current flow, it nominally remains at v cc ? 2. thus, v cc = 5 v translates into v iout(qbi) = 2.5 v. for unidirectional devices, when v cc = 5 v, v iout(quni) = 0.5 v. variation in v iout(q) can be attributed to the resolution of the allegro linear ic quiescent voltage trim, magnetic hysteresis, and thermal drift. electrical offset voltage (v oe ) the deviation of the device output from its ideal quiescent value of v cc ? 2 for b idirectional sensor ics and 0.5 v for unidirectional sensor ics, due to nonmagnetic causes. magnetic offset error (i errom ) the magnetic offset is due to the residual magnetism (remnant field) of the core material. the magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. the magnetic offset is largely dependent on the mate - rial used as a flux concentrator. total output error (e tot ) the maximum deviation of the actual output from its ideal value, also referred to as accuracy, illustrated graphically in the output voltage versus current chart on the following page. e tot is divided into four areas: ? 0 a at 25c. accuracy at the zero current flow at 25c, without the effects of temperature. ? 0 a over temperature. accuracy at the zero current flow including temperature effects. ? full-scale curr ent at 25c. accuracy at the full-scale current at 25c, without the effects of temperature. ? full-scale curr ent over temperature. accuracy at the full- scale current flow including temperature effects. = 100 (%) e tot(ip) v iout(ip) ? v iout_ideal(ip) sens ideal i p where v iout_ideal(ip) = v iout(q) + (sens ideal i p ) thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
22 output voltage versus sampled current total output error at 0 a and at full-scale current increasing v iout (v) +i p (a) accuracy accuracy acc u racy 25 c o nly acc u racy 25 c o nly a ccuracy 25 c on ly a ccuracy 0 a v ro e ? temp erature average v iout ?i p (a) v ro e ? temp erature v ro e ? temp erature decreasing v iout (v) i p (min) i p (max) half scale definitions of dynamic response character- istics power-on delay (t pod ) when the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. power-on delay, t pod , is defined as the time it takes for the out- put voltage to settle within 10% of its steady-state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, v cc (min), as shown in the chart at right. temperature compensation power-on time (t tc ) after power-on delay, t pod , elapses, t tc also is required before a valid temperature compensated output. rise time (t r ) the time interval between a) when the device reaches 10% of its full-scale value, and b) when it reaches 90% of its full-scale value. both t r and t response are detrimentally affected by eddy current losses observed in the conductive ic ground plane. response time (t response ) the time interval between a) when the applied current reaches 80% of its final value, and b) when the sensor reaches 80% of its output corresponding to the applied current. propagation delay (t prop ) the time interval between a) when the input current reaches 20% of its final value, and b) when the output reaches 20% of its final value. power-on reset voltage (v por ) at power-up, to initialize to a known state and avoid current spikes, the acs770 is held in reset state. the reset signal is disabled when v cc reaches v uvloh and time t porr has elapsed, allowing output voltage to go from a high-impedance state into normal operation. during power-down, the reset signal is enabled when v cc reaches v porl , causing output voltage to go into a high-impedance state. (note that a detailed description of por and uvlo operation can be found in the functional description section.) applied magnetic field transducer output 90 10 20 0 (%) propagation delay, t prop rise time, t r t thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
23 power-on reset release time (t porr ) when v cc rises to v porh , the power -on reset counter starts. the acs770 output voltage will transition from a high-imped- ance state to normal operation only when the power-on reset counter has reached t porr and v cc has exceeded v uvloh . under voltage lockout threshold (v uvlo ) if v cc drops below v uvlol , output voltage will be locked to gnd. if v cc starts rising, the acs770 will come out of the locked state when v cc reaches v uvloh . symmetr y (e sym ) the degree to which the absolute voltage output from the ic varies in proportion to either a positive or negative half-scale pri- mary current. the following equation is used to derive symmetry: 100 v? v iout_+half-scale amperes iout(q) v iout(q) iout_?half-scale amperes ?v () uvlo enable/disable release time (t uvlo ) when a falling v cc reaches v uvlol , time t uvloe is required to engage undervoltage lockout state. when v cc rises above v uvloh , time t uvlod is required to disable uvlo and have a valid output voltage. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
24 functional description the descriptions in this section assume: temperature = 25c, v cc = 5 v, no output load, and no significant current flow through the sensor ic. voltage levels shown are specific to a bidirectional acs770; however, the por and uvlo functionality described also applies to unidirectional sensors. the reference numbers section refer to figures 1 and 2. power-up at power-up, as v cc ramps up, the output is in a high-impedance state. when v cc crosses v porh (location [1] in figure 1 and [ 1 ] in figure 2), the por release counter starts counting for t porr . at this point, if v cc exceeds v uvloh [ 2 ], the output will go to v cc / 2 after t uvlod [ 3 ] . if v cc does not exceed v uvloh [2], the output will stay in the high-impedance state until v cc reaches v uvloh [3] and then will go to v cc / 2 after t uvlod [ 4 ]. v cc drops below v cc (min) = 4.5 v if v cc drops below v uvlol [ 4, 5 ] , the uvlo enable counter starts counting. if v cc is still below v uvlol when the counter reaches t uvloe , the uvlo function will be enabled and the ouput will be pulled near gnd [ 6 ] . if v cc exceeds v uvlol before the uvlo enable counter reaches t uvloe [ 5 ] , the output will continue to be v cc / 2. coming out of uvlo while uvlo is enabled [ 6 ] , if v cc exceeds v uvloh [ 7 ] , uvlo will be disabled after t uvlod , and the output will be v cc / 2 [ 8 ] . power-down as v cc ramps down below v uvlol [ 6, 9 ] , the uvlo enable counter will start counting. if v cc is higher than v porl when the counter reaches t uvloe , the uvlo function will be enabled and the output will be pulled near gnd [ 10 ] . the output will enter a high-impedance state as v cc goes below v porl [ 11 ] . if v cc falls below v porl before the uvlo enable counter reaches t uvloe , the output will transition directly into a high-impedance state [ 7 ]. power-on reset (por) and undervoltage lock-out (uvlo) operation thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
25 t uvloe t porr t porr t uvlod t uvlod t uvlod t uvloe 1 1? 2? 4? 5? 6? 7? 3? 2 5.0 v uvloh v uvloh v porh v porl v porh v porl v uvlol v uvlol 2.5 high impedance high impedance high impedance high impedance slope = v cc / 2 slope = v cc / 2 gnd time time time time gnd v cc v cc v out 5.0 2.5 gnd gnd v out 3 5 6 7 11 8 10 9 4 slope = v cc / 2 < t uvloe < t uvloe figure 1: por and uvlo operation: slow rise time case figure 2: por and uvlo operation: fast rise time case thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
26 chopper stabilization technique am p r egu la to r clock/logic ha ll e lement tuned filter anti-aliasing lp filter figure 3: concept of chopper stabilization technique when using hall-effect technology, a limiting factor for switchpoint accuracy is the small signal voltage developed across the hall element. this voltage is disproportionally small relative to the offset that can be produced at the output of the hall sensor ic. this makes it difficult to process the signal while maintaining an accurate, reliable output over the specified operating tempera- ture and voltage ranges. chopper stabilization is a unique approach used to minimize hall offset on the chip. allegro employs a technique to remove key sources of the output drift induced by thermal and mechani- cal stresses. this offset reduction technique is based on a signal modulation-demodulation process. the undesired offset signal is separated from the magnetic field-induced signal in the frequency domain, through modulation. the subsequent demodulation acts as a modulation process for the offset, causing the magnetic field- induced signal to recover its original spectrum at baseband, while the dc offset becomes a high-frequency signal. the magnetic- sourced signal then can pass through a low-pass filter, while the modulated dc offset is suppressed. in addition to the removal of the thermal and stress related offset, this novel technique also reduces the amount of thermal noise in the hall sensor ic while completely removing the modulated residue resulting from the chopper operation. the chopper sta- bilization technique uses a high-frequency sampling clock. for demodulation process, a sample-and-hold technique is used. this high-frequency operation allows a greater sampling rate, which results in higher accuracy and faster signal-processing capability. this approach desensitizes the chip to the effects of thermal and mechanical stresses, and produces devices that have extremely stable quiescent hall output voltages and precise recoverabil- ity after temperature cycling. this technique is made possible through the use of a bicmos process, which allows the use of low-offset, low-noise amplifiers in combination with high-density logic integration and sample-and-hold circuits. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
27 figure 4: package cb, 5-pin, leadform pff creepage distance, current terminals to signal pins: 7.25 mm clearance distance, current terminals to signal pins: 7.25 mm package mass: 4.63 g typical for reference only ? not for tooling use (reference dwg-91 11 & dwg-9110) dimensions in millimeters ?n ot to scale dimensions exclusive of mold ?ash, gate burs, and dambar protrusions exact case and lead con?guration at supplier discretion within limits shown 4 r 1.0 1.91 3 21.4 0.5 r 3.0 ? 0.8 ? 1.5 ? 0.5 r 2.05 1o2 5o5 23 17.5 0.2 2.9 0.2 3.5 0.2 3.5 0.2 1.50 0.10 1 4 5 a b branded face 0.381 +0.060 ?0.030 1 a b b c c nnnnnnn ttt-aaa lllllll yyww dambar removal intrusion perimeter through-holes recommended pcb layout reference vi ew = device part number =t emperature code =a mperage range = lot number = last two digits of year of manufacture = week of manufacture = supplier emblem n t a l y w standard branding reference vi ew branding scale and appearance at supplier discretion 14.0 0.2 4.0 0.2 3.0 0.2 10.00 0.10 0.51 0.10 7.00 0.10 1.9 0.2 13.00 0.10 4.40 0.10 package outline drawings thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
28 for reference only ? not for tooling use (reference dwg-9111, dwg-9110) dimensions in millimeters ? not to scale dimensions exclusive of mold ?ash, gate burs, and dambar protrusions exact case and lead con?guration at supplier discretion within limits shown 4 5 a 2.75 0.10 1.50 0.10 14.0 0.2 4.0 0.2 3.0 0.2 10.00 0.10 7.00 0.10 13.00 0.10 4.40 0.10 23.50 0.5 1 branded face a b b nnnnnnn ttt-aaa lllllll yyww dambar removal intrusion = device part number =t emperature code = amperage range = lot number = last two digits of year of manufacture = week of manufacture = supplier emblem n t a l y w standard branding reference view branding scale and appearance at supplier discretion 23 1 0.51 0.10 1.9 0.2 5o5 2.9 0.2 3.5 0.2 0.381 +0.060 ?0.030 1.91 ? 0.8 ? 1.5 b pcb layout reference view figure 5: package cb, 5-pin, leadform psf creepage distance, current terminals to signal pins: 7.25 mm clearance distance, current terminals to signal pins: 7.25 mm package mass: 4.63 g typical thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
29 for the latest version of this document, visit our website: www.allegromicro.com copyright ?2011-2016, allegro microsystems, llc allegro microsystems, llc reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegros products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of allegros product can reasonably be expected to cause bodily harm. the information included herein is believed to be accurate and reliable. however, allegro microsystems, llc assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. revision history number date description 1 december 8, 2014 revised selection guide 2 january 20, 2015 revised v porh typical value 3 march 11, 2015 revised v rcc , v riout , i out(source) , i errom (100 a and 150 a) values, and added symmetry to x150b performance characteristics table 4 april 8, 2015 updated tuv certification 5 november 2, 2016 updated pcb layout reference view in package outline drawing on page 27. thermally enhanced, fully integrated, hall-effect-based high-precision linear current sensor ic with 100 ? current conductor ACS770XCB allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com

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